DE3010718A1 - High temp. measurement device - has sintered silicon diode sensor in glass body that has been repeatedly temp. cycled - Google Patents

High temp. measurement device - has sintered silicon diode sensor in glass body that has been repeatedly temp. cycled

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Publication number
DE3010718A1
DE3010718A1 DE19803010718 DE3010718A DE3010718A1 DE 3010718 A1 DE3010718 A1 DE 3010718A1 DE 19803010718 DE19803010718 DE 19803010718 DE 3010718 A DE3010718 A DE 3010718A DE 3010718 A1 DE3010718 A1 DE 3010718A1
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DE
Germany
Prior art keywords
temp
diode
measurement device
glass body
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19803010718
Other languages
German (de)
Inventor
Theo 8011 Aschheim Sanders
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to DE19803010718 priority Critical patent/DE3010718A1/en
Publication of DE3010718A1 publication Critical patent/DE3010718A1/en
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

A temp measurement device using a diode as a temp. sensor is esp. for control and regulation of temp. above 200 degrees Celsius. It eliminates the disadvantages of conventional arrangements, such as high cost, too low a signal difference, and hysteresis effects. The sensor is a commercially available diode which is subjected to a sintering process. It may be a silicon diode in a glass body which has a very low forward operating current. The sintering procedure involves periodically subjecting the diode to a slowly increasing and then returning temp. The diode replaces such conventional components as thermoelements, heat conductors, cold conductors, and bimetallic elements. Commercial diodes are normally operable up to 100 degrees Celsius accurately and 175 degrees as an absolute maximum.

Description

Einrichtung zur Temperaturbestimmung Device for determining temperature

Gegenstand der Erfindung ist eine Einrichtung zur Temperaturbestimmung, insbesondere zur Steuerung und Regelung von Temperaturen über 200 Grad Celsius, z.B. Temperaturwächter mit selbständiger Weidereinschaltung.The invention relates to a device for determining temperature, especially for controlling and regulating temperatures over 200 degrees Celsius, E.g. temperature monitor with automatic switch-on.

Bekannte Einrichtungen bedienen sich hauptsächlich folgender Bauelemente: Thermoelemente, Heißleiter, Kaltleiter, Bimetalle.Well-known facilities mainly use the following components: Thermocouples, NTC thermistors, PTC thermistors, bimetals.

Die erwähnten Bauteile haben bei Anwendung über 200 Grad verschiedene Nachteile, nämlich, hoher Preis (Thermoelemente, Heißleiter, Kaltleiter), zu geringe Signalunterschiede (Thermoelemente, Heißleiter, Kaltleiter) und hysterese Erscheinungen (Bimetall).The components mentioned have different degrees when used over 200 degrees Disadvantages, namely, high price (thermocouples, NTC thermistors, PTC thermistors), too low Signal differences (thermocouples, NTC thermistors, PTC thermistors) and hysteresis phenomena (Bimetal).

Es ist Aufgabe der Erfindung, die erwähnten Nachteile zu beseitigen. Die Erfindung bedient sich einer Diode, als Temperatursensor, was an sich bekannt ist. Bei den bekannten Geräten ist der Anwendungsbereich jedoch begrenzt und zwar naximal bis@100 Grad Celsius. Eine Awendung bei nöheren Temperaturen scheiterte bisher an der Instabilität der Daten und der Funktionssicherheit.It is the object of the invention to eliminate the disadvantages mentioned. The invention uses a diode as a temperature sensor, which is known per se is. In the case of the known devices, however, the area of application is limited naximal up to @ 100 degrees Celsius. An application at higher temperatures failed so far because of the instability of the data and the functional reliability.

Die Herstellerfirmen ar an tieren deshalb ab etwa 175 Grad keine Werte und Funktionssicherheit mehr.The manufacturing companies therefore do not use values from around 175 degrees and functional reliability more.

Die Erfinden geht von einer handelsüblichen Diode als Temperatursensor aus und ist dadurch gekennzeichnet, daß die Diode einem Sintertrozeß ausx3Xesetzt wird. Zu deren Zweck wird die Diode zeitlich periodisch einer langsam ansteigenden und wieder zurückgehenden Temperatur ausesetzt.The invention is based on a commercially available diode as a temperature sensor off and is characterized in that the diode is exposed to a sintering process will. For this purpose, the diode is periodically increasing slowly and again exposed to decreasing temperature.

Es ist zweckmäßig eine Siliziumdiode im Glaskörper zu verwenden.It is advisable to use a silicon diode in the glass body.

Eine wesentliche Voraussetzung für die Funktionssicherheit ist, daß die Diode in Durchlaßrichtung mit einem relativ geringem Strom betrieben wiPd.An essential prerequisite for functional reliability is that the diode operated in the forward direction with a relatively low current wiPd.

Claims (1)

P a t e n t a n s p r ü c h e 1. Einrichtung zur Temperaturbestimmung, bei der als Temperatursensor eine Diode verwendet wird,dadurch gekannzeichnet,daß eine handelsübliche Diode Verwendung findet,die einem Sinterprozeß ausgesetzt warO 2. Einrichtung nach Anspruch 1, dadurch gekennzeichnet, daß als Diode eine Siliziumdiode im Glaskörper vorwendet wird. P a t e n t a n s p r ü c h e 1. Device for determining temperature, in which a diode is used as a temperature sensor, characterized in that a commercially available diode is used which has been subjected to a sintering process 2. Device according to claim 1, characterized in that a silicon diode is used as the diode is used in the vitreous. 3. Einrichtung nach Anspruch 1. uder 2,dadurch gekennzeichnet, als eine Diode in Durchlaßrichtung mit relativ geringem Strom betrieben wird. 3. Device according to claim 1. uder 2, characterized as a diode is operated in the forward direction with a relatively low current.
DE19803010718 1980-03-20 1980-03-20 High temp. measurement device - has sintered silicon diode sensor in glass body that has been repeatedly temp. cycled Ceased DE3010718A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19803010718 DE3010718A1 (en) 1980-03-20 1980-03-20 High temp. measurement device - has sintered silicon diode sensor in glass body that has been repeatedly temp. cycled

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803010718 DE3010718A1 (en) 1980-03-20 1980-03-20 High temp. measurement device - has sintered silicon diode sensor in glass body that has been repeatedly temp. cycled

Publications (1)

Publication Number Publication Date
DE3010718A1 true DE3010718A1 (en) 1981-09-24

Family

ID=6097787

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803010718 Ceased DE3010718A1 (en) 1980-03-20 1980-03-20 High temp. measurement device - has sintered silicon diode sensor in glass body that has been repeatedly temp. cycled

Country Status (1)

Country Link
DE (1) DE3010718A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533898A (en) * 1982-12-07 1985-08-06 U.S. Philips Corporation Symmetrical temperature sensor
US5369245A (en) * 1991-07-31 1994-11-29 Metron Designs Ltd. Method and apparatus for conditioning an electronic component having a characteristic subject to variation with temperature
US6104075A (en) * 1997-03-26 2000-08-15 Nissan Motor Co., Ltd. Semiconductor temperature sensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533898A (en) * 1982-12-07 1985-08-06 U.S. Philips Corporation Symmetrical temperature sensor
EP0111361B1 (en) * 1982-12-07 1987-11-19 Philips Patentverwaltung GmbH Symmetric temperature sensor
US5369245A (en) * 1991-07-31 1994-11-29 Metron Designs Ltd. Method and apparatus for conditioning an electronic component having a characteristic subject to variation with temperature
US6104075A (en) * 1997-03-26 2000-08-15 Nissan Motor Co., Ltd. Semiconductor temperature sensor

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