WO2008090733A1 - Semiconductor light reception element - Google Patents
Semiconductor light reception element Download PDFInfo
- Publication number
- WO2008090733A1 WO2008090733A1 PCT/JP2008/000045 JP2008000045W WO2008090733A1 WO 2008090733 A1 WO2008090733 A1 WO 2008090733A1 JP 2008000045 W JP2008000045 W JP 2008000045W WO 2008090733 A1 WO2008090733 A1 WO 2008090733A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductive
- layer
- mesa
- selective etching
- light reception
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
Landscapes
- Light Receiving Elements (AREA)
Abstract
A semiconductor light reception element has a layered structure including a first conductive selective etching layer, a first conductive field-relaxing layer, a multiplication layer, a second conductive field-relaxing layer, a second conductive light-absorbing layer, a second conductive selective etching layer, a second conductive buffer layer, a second conductive contact layer, and a second conductive side electrode which are successively layered in this order on a semiconductor substrate. A second mesa is formed on the semiconductor substrate. On the second mesa is formed a first mesa. The first mesa includes a second conductive buffer layer, a second conductive contact layer, and a second conductive side electrode. The second mesa includes a first conductive layer, a multiplication layer, a second conductive light-absorbing layer, and a second conductive selective etching layer. In a plan view, the second mesa has an outer circumferential brim located outside the outer circumferential brim of the first mesa. The surfaces of the first mesa and the second mesa are covered with a passivation film.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008554999A JP5109981B2 (en) | 2007-01-22 | 2008-01-18 | Semiconductor photo detector |
| US12/524,059 US8039918B2 (en) | 2007-01-22 | 2008-01-18 | Semiconductor photo detector |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007011935 | 2007-01-22 | ||
| JP2007-011935 | 2007-01-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008090733A1 true WO2008090733A1 (en) | 2008-07-31 |
Family
ID=39644308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/000045 Ceased WO2008090733A1 (en) | 2007-01-22 | 2008-01-18 | Semiconductor light reception element |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8039918B2 (en) |
| JP (1) | JP5109981B2 (en) |
| WO (1) | WO2008090733A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012132758A1 (en) * | 2011-03-28 | 2012-10-04 | 三洋電機株式会社 | Photoelectric conversion device and method for producing photoelectric conversion device |
| JP2019501535A (en) * | 2016-09-20 | 2019-01-17 | リミテッド ライアビリティ カンパニー デファン （エルエルシー デファン） | Avalanche photodetector |
| JP2022164531A (en) * | 2021-04-16 | 2022-10-27 | 聯亜光電工業股▲ふん▼有限公司 | non-diffused photodiode |
| CN115425112A (en) * | 2022-09-19 | 2022-12-02 | 中国电子科技集团公司第四十四研究所 | A kind of highly reliable InP mesa photodetector and its preparation method |
| JP7615412B1 (en) * | 2024-03-26 | 2025-01-16 | 三菱電機株式会社 | Semiconductor photodetector, method of manufacturing semiconductor photodetector, optical line terminal, multilevel intensity modulation transmitter/receiver, digital coherent receiver, optical fiber radio system, SPAD sensor system, and lidar device |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8868411B2 (en) * | 2010-04-12 | 2014-10-21 | Smule, Inc. | Pitch-correction of vocal performance in accord with score-coded harmonies |
| JP5642593B2 (en) * | 2010-05-18 | 2014-12-17 | 日本オクラロ株式会社 | Back-illuminated semiconductor photo detector, optical receiver module, optical transceiver |
| US8330171B2 (en) * | 2010-07-23 | 2012-12-11 | Intel Corporation | High speed, wide optical bandwidth, and high efficiency resonant cavity enhanced photo-detector |
| US9000783B2 (en) * | 2010-08-02 | 2015-04-07 | Wafertech, Llc | Solid state sensor for metal ion detection and trapping in solution |
| GB2504977B (en) | 2012-08-16 | 2017-10-04 | Airbus Defence & Space Gmbh | Laser power converter |
| US9209216B2 (en) | 2013-08-07 | 2015-12-08 | Globalfoundries Inc | Passivation of back-illuminated image sensor |
| CN109309141A (en) * | 2018-09-28 | 2019-02-05 | 苏州大学 | InGaAs-InP based heterojunction phototransistors |
| CN109216495B (en) * | 2018-10-24 | 2023-12-29 | 芯思杰技术(深圳)股份有限公司 | Avalanche photodetector, manufacturing method and laser radar system |
| RU2732694C1 (en) * | 2019-03-12 | 2020-09-21 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Avalanche photodetector (embodiments) and method of manufacturing thereof (embodiments) |
| US11056604B1 (en) * | 2020-02-18 | 2021-07-06 | National Central University | Photodiode of avalanche breakdown having mixed composite charge layer |
| CN114220877A (en) * | 2021-11-27 | 2022-03-22 | 苏州大学 | Up-conversion device based on near-infrared photoelectric detector and OLED and manufacturing method thereof |
| US20240105752A1 (en) * | 2022-09-22 | 2024-03-28 | Sumitomo Electric Industries, Ltd. | Light receiving element and light detector |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06314813A (en) * | 1993-03-04 | 1994-11-08 | Sumitomo Electric Ind Ltd | P-i-n photosensitive element, its manufacture and photoelectronic integrated circuit |
| JP2001177143A (en) * | 1999-12-17 | 2001-06-29 | Hitachi Ltd | Semiconductor light receiving device and manufacturing method |
| JP2001196623A (en) * | 2000-01-14 | 2001-07-19 | Matsushita Electric Ind Co Ltd | Semiconductor device, method of manufacturing semiconductor device, method of manufacturing mounted body, and mounted body |
| WO2006123410A1 (en) * | 2005-05-18 | 2006-11-23 | Mitsubishi Denki Kabushiki Kaisha | Avalanche photo diode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2474560C (en) | 2002-02-01 | 2012-03-20 | Picometrix, Inc. | Planar avalanche photodiode |
-
2008
- 2008-01-18 WO PCT/JP2008/000045 patent/WO2008090733A1/en not_active Ceased
- 2008-01-18 JP JP2008554999A patent/JP5109981B2/en not_active Expired - Fee Related
- 2008-01-18 US US12/524,059 patent/US8039918B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06314813A (en) * | 1993-03-04 | 1994-11-08 | Sumitomo Electric Ind Ltd | P-i-n photosensitive element, its manufacture and photoelectronic integrated circuit |
| JP2001177143A (en) * | 1999-12-17 | 2001-06-29 | Hitachi Ltd | Semiconductor light receiving device and manufacturing method |
| JP2001196623A (en) * | 2000-01-14 | 2001-07-19 | Matsushita Electric Ind Co Ltd | Semiconductor device, method of manufacturing semiconductor device, method of manufacturing mounted body, and mounted body |
| WO2006123410A1 (en) * | 2005-05-18 | 2006-11-23 | Mitsubishi Denki Kabushiki Kaisha | Avalanche photo diode |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012132758A1 (en) * | 2011-03-28 | 2012-10-04 | 三洋電機株式会社 | Photoelectric conversion device and method for producing photoelectric conversion device |
| JP2019501535A (en) * | 2016-09-20 | 2019-01-17 | リミテッド ライアビリティ カンパニー デファン （エルエルシー デファン） | Avalanche photodetector |
| JP2022164531A (en) * | 2021-04-16 | 2022-10-27 | 聯亜光電工業股▲ふん▼有限公司 | non-diffused photodiode |
| US11699771B2 (en) | 2021-04-16 | 2023-07-11 | Landmark Optoelectronics Corporation | Non-diffusion type photodiode |
| CN115425112A (en) * | 2022-09-19 | 2022-12-02 | 中国电子科技集团公司第四十四研究所 | A kind of highly reliable InP mesa photodetector and its preparation method |
| JP7615412B1 (en) * | 2024-03-26 | 2025-01-16 | 三菱電機株式会社 | Semiconductor photodetector, method of manufacturing semiconductor photodetector, optical line terminal, multilevel intensity modulation transmitter/receiver, digital coherent receiver, optical fiber radio system, SPAD sensor system, and lidar device |
| WO2025203206A1 (en) * | 2024-03-26 | 2025-10-02 | 三菱電機株式会社 | Semiconductor light-receiving element, method for manufacturing semiconductor light-receiving element, optical-line-terminating device, multi-value intensity modulation transmission/reception device, digital coherent reception device, optical fiber radio system, spad sensor system, and lidar device |
| JP2025149869A (en) * | 2024-03-26 | 2025-10-08 | 三菱電機株式会社 | Semiconductor photodetectors, optical line terminals, multilevel intensity modulation transmitters and receivers, digital coherent receivers, radio-over-fiber systems, SPAD sensor systems, and lidar devices |
| JP7774702B2 (en) | 2024-03-26 | 2025-11-21 | 三菱電機株式会社 | Semiconductor photodetectors, optical line terminals, multilevel intensity modulation transmitters and receivers, digital coherent receivers, radio-over-fiber systems, SPAD sensor systems, and lidar devices |
Also Published As
| Publication number | Publication date |
|---|---|
| US20100019275A1 (en) | 2010-01-28 |
| JP5109981B2 (en) | 2012-12-26 |
| JPWO2008090733A1 (en) | 2010-05-20 |
| US8039918B2 (en) | 2011-10-18 |
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